Characterization of trapping effects, robustness and linearity in GaN HEMTs for high power and low noise microwave amplifiers

Författare
Olle Axelsson
Genre
theses
Språk
Engelska
Förlag År Ort Om boken ISBN
Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience - MC2, Chalmers university of technology 2016 Sverige, Gothenburg 66 sidor : illustrationer 978-91-7597-335-7